| 释义 |
epitaxy|ɛpɪˈtæksɪ, ˈɛpɪtæksɪ|
Also in mod.L. form epiˈtaxis.
[ad. F. épitaxie (L. Royer 1928, in Bull. de la Soc. française de Min. LI. 8), f. epi- + Gr. τάξις arrangement: see -y3.]
The growth of crystals on a crystalline substrate that determines their orientation; the orientation of crystals so grown.
[1929Mineral. Abstr. IV. 175 ‘Épitaxie’ is possible when the reticular distances are approximately identical only in two dimensions and not in three.] 1931Ibid. 566 (index) Epitaxy. 1934Ibid. V. 495 For epitaxy there is required both geometrical agreement and similarity of polarity between particles which replace one another at the points of union. 1949Proc. Physical Soc. LXIIa. 344 (heading) The structure and epitaxy of lead chloride deposits formed from lead sulphide and sodium chloride. 1951H. E. Buckley Crystal Growth x. 382 The formation of small crystal elements of the impurity growing, on account of dimensional similarity, in parallel position on the plane in the host crystal (epitaxis). 1961New Scientist 26 Oct. 244/1 Epitaxis. This is the latest weapon in the semiconductor engineers' armoury.
Hence epiˈtaxial a. [-al], grown by, characterized by, or resulting from epitaxy: used of crystals, crystal growth, and crystal orientation; epiˈtaxially adv., so that epitaxy occurs; by an epitaxial process.
1949Proc. Physical Soc. LXIIa. 352 When strong epitaxial orientation occurs there are..usually two or more lattice row types which are parallel in the substrate and overgrowth crystals. 1960Proc. IRE XLVIII. 1642/1 Epitaxial Diffused Transistors. This letter describes diffused base transistors, the structures of which incorporate thin semiconductor layers epitaxially deposited on low-resistivity substrates of the same semiconductor. 1960New Scientist 25 Aug. 504/3 Epitaxial crystal growth (in which the growing crystal has the same orientation as the ‘seed’). 1962L. P. Hunter Handbk. Semiconductor Electronics (ed. 2) iv. 46 The transistors currently referred to as ‘epitaxial’ are diffused junction transistors made on epitaxially deposited material. 1966New Scientist 30 June 848/1 It is now also possible to grow epitaxial silicon crystal layers on to a single-crystal silicon substrate. |