| 释义 |
pinch-off Electronics.
Also pinch off.
[f. vbl. phr. to pinch off s.v. pinch v. 2 e.]
In a field-effect transistor, the meeting of the two non-conducting depletion layers that border the channel, such that little further increase in current is achieved by increasing the drain voltage. Freq. attrib., esp. in pinch-off voltage, the reverse bias that must be applied to the gate to achieve pinch-off and prevent the flow of current through the channel (equal to the drain voltage at which the current saturates when there is no bias applied to the gate).
1952W. Shockley in Proc. IRE XL. 1367/1 W0 is the magnitude of reverse bias required to make the space charge penetrate the entire p-region. We shall refer to it as the ‘pinch-off voltage’ since it is the voltage that will reduce the channel to zero and pinch off the conducting path. Ibid. 1374/1 We shall consider a structure operated with the drain beyond pinch-off. 1956L. P. Hunter Handbk. Semiconductor Electronics iv. 31 For the depletion region to fill the entire channel b = o and V(b) = V0... V0 is called the pinch-off voltage. Ibid. 32 As the bias..at the drain end is increased beyond V0, the pinch-off condition moves toward the source. The field between the drain end and the point along the channel where pinch off is effectively reached must be large enough to maintain the current I flowing in the open part of the channel. 1962J. Evans Fund. Princ. Transistors x. 228 If VG is large enough, pinch-off occurs at all values of VD—the situation when VG = W0. 1972Field-Effect Transistors (Mullard Ltd., London) ii. 8 The line joining the various drain-source voltages VDS(p) at which this pinch-off occurs (the pinch-off limit) is shown as a broken line in Fig. 7... To the right of the pinch-off limit—in the pinch-off region—the drain current only increases very slightly. 1974Harvey & Bohlman Stereo F.M. Radio Handbk. v. 88 The voltage corresponding to zero Id is called the pinch-off voltage. |