英语词汇“field-effect transistor”的英英意思、用法、释义、翻译、读音、例句、短语、词组-英语词典-新都网

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field-effect transistor

field-effect transistor n. Electronics a transistor in which the current flows along a channel whose effective resistance can be controlled by a transverse electric field applied across a gate region surrounding the channel (the gate and the channel being of opposite conductivity types); abbreviated FET.Cf. MESFET n., MOSFET n. at M n. Initialisms 1.

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the world > matter > physics > solid state physics > semiconductivity > transistor > [noun] > field-effect transistor

field-effect transistor1952

MOST1965

1952 W. Shockley in Proc. IRE 40 1365/2 The field-effect transistor was conceived as consisting of a thin layer of semiconductor separated from another conducting electrode by a layer of dielectric.

1970 J. Earl How to choose Tuners & Amplifiers ii. 33 Trend is towards field effect transistors in the f.m. front-end.

2009 Nature 16 Apr. 846/1 Their chemically reduced nanoribbons are in principle suitable for making field-effect transistors.

extracted from fieldn.¹

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单词	field-effect transistor
释义	> as lemmas field-effect transistor field-effect transistor n. Electronics a transistor in which the current flows along a channel whose effective resistance can be controlled by a transverse electric field applied across a gate region surrounding the channel (the gate and the channel being of opposite conductivity types); abbreviated FET.Cf. MESFET n., MOSFET n. at M n. Initialisms 1. ΘΚΠ the world > matter > physics > solid state physics > semiconductivity > transistor > [noun] > field-effect transistor field-effect transistor1952 MOST1965 1952 W. Shockley in Proc. IRE 40 1365/2 The field-effect transistor was conceived as consisting of a thin layer of semiconductor separated from another conducting electrode by a layer of dielectric. 1970 J. Earl How to choose Tuners & Amplifiers ii. 33 Trend is towards field effect transistors in the f.m. front-end. 2009 Nature 16 Apr. 846/1 Their chemically reduced nanoribbons are in principle suitable for making field-effect transistors. extracted from fieldn.¹ < as lemmas
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