high-electron-mobility transistor

[′hī i′lek‚trän mō¦bil·əd·ē tran‚zis·tər] (electronics) A type of field-effect transistor consisting of gallium arsenide and gallium aluminum arsenide, with a Schottky metal contact on the gallium aluminum arsenide layer and two ohmic contacts penetrating into the gallium arsenide layer, serving as the gate, source, and drain respectively. Abbreviated HEMT. Also known as heterojunction field-effect transistor (HFET); modulation-doped field-effect transistor (MODFET); selectively doped heterojunction transistor (SDHT); two-dimensional electron gas field-effect transistor (TEGFET).

单词	high-electron-mobility transistor
释义	high-electron-mobility transistor high-electron-mobility transistor [′hī i′lek‚trän mō¦bil·əd·ē tran‚zis·tər] (electronics) A type of field-effect transistor consisting of gallium arsenide and gallium aluminum arsenide, with a Schottky metal contact on the gallium aluminum arsenide layer and two ohmic contacts penetrating into the gallium arsenide layer, serving as the gate, source, and drain respectively. Abbreviated HEMT. Also known as heterojunction field-effect transistor (HFET); modulation-doped field-effect transistor (MODFET); selectively doped heterojunction transistor (SDHT); two-dimensional electron gas field-effect transistor (TEGFET).
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