[′in·sə‚lād·əd ¦səb‚strāt ¦män·ə¦lith·ik ′sər·kət] (electronics) Integrated circuit which may be either an all-diffused device or a compatible structure so constructed that the components within the silicon substrate are insulated from one another by a layer of silicon dioxide, instead of reverse-biased pn junctions used for isolation in other techniques.