metal-nitride-oxide semiconductor

metal-nitride-oxide semiconductor

[′med·əl ¦nī‚trīd ¦äk‚sīd ′sem·i·kən‚dək·tər] (solid-state physics) A semiconductor structure that has a double insulating layer; typically, a layer of silicon dioxide (SiO2) is nearest the silicon substrate, with a layer of silicon nitride (Si3N4) over it. Abbreviated MNOS.