Osipian, Iurii

Born Feb. 15, 1931, in Moscow. Soviet physicist. Corresponding member of the Academy of Sciences of the USSR (1972). Member of the CPSU since 1959.

Osip’ian graduated from the Moscow Institute of Steel in 1955. From 1955 to 1962, he was on the staff of the Institute of Metal Physics of the Central Scientific Research Institute of Ferrous Metallurgy. In 1962 and 1963, he was the deputy director of the Institute of Crystallography of the Academy of Sciences of the USSR. In 1973, Osip’ian became the director of the Institute of Solid-state Physics of the Academy of Sciences of the USSR. In 1970 he was appointed a professor at the Moscow Physicotechnical Institute.

Osip’ian’s main works deal with solid-state physics. Osip’ian investigated the interaction of dislocations and electrons in solids and discovered new phenomena in solids, for example, the pho-toplastic effect, electron paramagnetic resonance in dislocations, and dislocation conductivity. His works have become the basis for a new field, dislocation solid-state physics.

Osip’ian has been awarded two orders and various medals.