Page Mode Dynamic Random Access Memory


Page Mode Dynamic Random Access Memory

(hardware, storage)A technique used to support fastersequential access to DRAM by allowing any number of accessesto the currently open row to be made after supplying the row address just once.

The RAS signal is kept active, and with each falling edgeof the CAS\\ signal a new column address can be suppliedand the corresponding bits can be accessed. This is fasterthan a full RAS-CAS cycle because only the shorter ColumnAccess Time needs to be obeyed.

Note that strictly speaking such a DRAM is not a true random access memory since accesses to the open row are faster thanto other locations.

EDO RAM is replacing Page Mode DRAM in many newmicrocomputers.