单词 |
plasma-source ion implantation |
释义 |
plasma-source ion implantation plasma-source ion implantation[¦plaz·mə ‚sȯrs ′ī·ən ‚im·plan‚tā·shən] (engineering) A method of ion implantation in which the workpiece is placed in a plasma containing the appropriate ion species and is repetitively pulse-biased to a high negative potential so that positive plasma ions are accelerated to the surface and implant in the bulk material. Abbreviated PSII. |
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