silicon controlled rectifier

[′sil·ə·kən kən′trōld ′rek·tə‚fī·ər] (electronics) A semiconductor rectifier that can be controlled; it is a pnpn four-layer semiconductor device that normally acts as an open circuit, but switches rapidly to a conducting state when an appropriate gate signal is applied to the gate terminal. Abbreviated SCR. Also known as reverse-blocking triode thyristor.

silicon controlled rectifier

A four-layer thyristor developed by General Electric in the 1950s. See thyristor.

单词	silicon controlled rectifier
释义	silicon controlled rectifier silicon controlled rectifier [′sil·ə·kən kən′trōld ′rek·tə‚fī·ər] (electronics) A semiconductor rectifier that can be controlled; it is a pnpn four-layer semiconductor device that normally acts as an open circuit, but switches rapidly to a conducting state when an appropriate gate signal is applied to the gate terminal. Abbreviated SCR. Also known as reverse-blocking triode thyristor. silicon controlled rectifier A four-layer thyristor developed by General Electric in the 1950s. See thyristor. AcronymsSeeSCR
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