| 释义 |
floating-gate avalanche-injection metal-oxide semiconductor device floating-gate avalanche-injection metal-oxide semiconductor device[¦flōd·iŋ ¦gāt ¦av·ə‚lanch in¦jek·shən ¦med·əl ¦äk‚sīd ‚sem·i·kən′dək·tər di‚vīs] (electronics) An erasable programmable read-only memory chip that holds its contents until they are erased by ultraviolet light. Abbreviated FAMOS device. |