| 释义 |
Definition of dopant in English: dopantnoun ˈdəʊp(ə)ntˈdoʊpənt Electronics A substance used to produce a desired electrical characteristic in a semiconductor. Example sentencesExamples - Conventional ion sources use a tungsten filament to inject the gas containing the dopant with electrons.
- Essentially, the losses introduced by the microstructure (surface scattering and so on) should not exceed the reduction in loss we achieve by eliminating dopants and therefore reducing material scattering.
- By changing the electrochemical current, the electrolyte composition, and the dopant characteristics of the wafer, one can tune the average diameter of the pores from a few nanometers to several micrometers.
- Often the conducting properties of a semiconductor can be varied by adding an impurity known as a dopant so that a semiconductor can be made to act like either an insulator or a conductor.
- Due to the original content of the iron dopant and the size of the resist pattern, the diameter of the particle can be effectively controlled well below the lithography limit.
Origin 1960s: from the verb dope + -ant. Definition of dopant in US English: dopantnounˈdoʊpəntˈdōpənt Electronics A substance used to produce a desired electrical characteristic in a semiconductor. Example sentencesExamples - Essentially, the losses introduced by the microstructure (surface scattering and so on) should not exceed the reduction in loss we achieve by eliminating dopants and therefore reducing material scattering.
- Conventional ion sources use a tungsten filament to inject the gas containing the dopant with electrons.
- Often the conducting properties of a semiconductor can be varied by adding an impurity known as a dopant so that a semiconductor can be made to act like either an insulator or a conductor.
- By changing the electrochemical current, the electrolyte composition, and the dopant characteristics of the wafer, one can tune the average diameter of the pores from a few nanometers to several micrometers.
- Due to the original content of the iron dopant and the size of the resist pattern, the diameter of the particle can be effectively controlled well below the lithography limit.
Origin 1960s: from the verb dope + -ant. |